JPS6153860B2 - - Google Patents
Info
- Publication number
- JPS6153860B2 JPS6153860B2 JP52054282A JP5428277A JPS6153860B2 JP S6153860 B2 JPS6153860 B2 JP S6153860B2 JP 52054282 A JP52054282 A JP 52054282A JP 5428277 A JP5428277 A JP 5428277A JP S6153860 B2 JPS6153860 B2 JP S6153860B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- type
- well region
- capacitor
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000002441 reversible effect Effects 0.000 claims description 5
- 230000003071 parasitic effect Effects 0.000 description 19
- 230000010355 oscillation Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5428277A JPS53139959A (en) | 1977-05-13 | 1977-05-13 | Amplifying circuit |
| US05/902,852 US4247826A (en) | 1977-05-13 | 1978-05-04 | Semiconductor integrated amplifier |
| DE19782820982 DE2820982A1 (de) | 1977-05-13 | 1978-05-12 | Integrierter halbleiterverstaerker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5428277A JPS53139959A (en) | 1977-05-13 | 1977-05-13 | Amplifying circuit |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59081772A Division JPS6035557A (ja) | 1984-04-25 | 1984-04-25 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53139959A JPS53139959A (en) | 1978-12-06 |
| JPS6153860B2 true JPS6153860B2 (en]) | 1986-11-19 |
Family
ID=12966198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5428277A Granted JPS53139959A (en) | 1977-05-13 | 1977-05-13 | Amplifying circuit |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4247826A (en]) |
| JP (1) | JPS53139959A (en]) |
| DE (1) | DE2820982A1 (en]) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57185705A (en) * | 1981-05-12 | 1982-11-16 | Citizen Watch Co Ltd | Quartz oscillator |
| GB2111215A (en) * | 1981-10-31 | 1983-06-29 | Alastair Sibbald | Electrochemical sensor assembly |
| CA1310078C (en) * | 1987-11-27 | 1992-11-10 | American Telephone And Telegraph Company | Voltage controlled variable capacitor |
| JP3039930B2 (ja) * | 1988-06-24 | 2000-05-08 | 株式会社日立製作所 | Ｍｉｓ容量の接続方法 |
| JP2740038B2 (ja) * | 1990-06-18 | 1998-04-15 | 株式会社東芝 | Ｍｏｓ（ｍｉｓ）型コンデンサー |
| JP3110262B2 (ja) * | 1993-11-15 | 2000-11-20 | 松下電器産業株式会社 | 半導体装置及び半導体装置のオペレーティング方法 |
| SE515783C2 (sv) * | 1997-09-11 | 2001-10-08 | Ericsson Telefon Ab L M | Elektriska anordningar jämte förfarande för deras tillverkning |
| US6888157B1 (en) * | 2001-07-27 | 2005-05-03 | Advanced Micro Devices, Inc. | N-Gate/N-Substrate or P-Gate/P-Substrate capacitor to characterize polysilicon gate depletion evaluation |
| JP4674299B2 (ja) * | 2005-05-11 | 2011-04-20 | インターチップ株式会社 | 反転増幅器及びこれを有する水晶発振器 |
| US8765607B2 (en) * | 2011-06-01 | 2014-07-01 | Freescale Semiconductor, Inc. | Active tiling placement for improved latch-up immunity |
| US8878337B1 (en) * | 2011-07-19 | 2014-11-04 | Xilinx, Inc. | Integrated circuit structure having a capacitor structured to reduce dishing of metal layers |
| WO2014021358A1 (ja) | 2012-08-02 | 2014-02-06 | 株式会社堀場製作所 | 増幅器及び放射線検出器 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3886458A (en) * | 1972-12-12 | 1975-05-27 | Sony Corp | Frequency converter circuit with integrated injection capacitor |
| JPS5855685B2 (ja) * | 1975-09-03 | 1983-12-10 | 株式会社日立製作所 | ゾウフクカイロ |
-
1977
- 1977-05-13 JP JP5428277A patent/JPS53139959A/ja active Granted
-
1978
- 1978-05-04 US US05/902,852 patent/US4247826A/en not_active Expired - Lifetime
- 1978-05-12 DE DE19782820982 patent/DE2820982A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53139959A (en) | 1978-12-06 |
| DE2820982A1 (de) | 1978-12-07 |
| US4247826A (en) | 1981-01-27 |
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